strong ir fet? IRFB7446pbf hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free* ? ? rohs compliant, halogen-free* v dss 40v r ds(on) typ. 2.6m ? ? max 3.3m ? ? i d (silicon limited) 123a ? i d (package limited) 120a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRFB7446pbf s d g g d s gate drain source base part number package type standard pack orderable part number form quantity IRFB7446pbf to-220 tube 50 IRFB7446pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 25 50 75 100 125 150 175 t c , case temperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 70a t j = 25c t j = 125c downloaded from: http:///
2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain curren t, vgs @ 10v (silicon limited) 123 ? a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 87 i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 120 i dm pulsed drain current ?? 492 p d @t c = 25c maximum power dissipation 99 w linear derating factor 0.66 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as single pulse avalanche energy ?? 111 mj e as (l=1mh) single pulse avalanche energy ?? 236 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 1.52 c/w ? r ? cs case-to-sink, flat greased surface 0.50 CCC r ? ja junction-to-ambient ? CCC 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.033 CCC v/c reference to 25c, i d = 5ma ? r ds(on) CCC 2.6 3.3 m ??? v gs = 10v, i d = 70a ? CCC 3.9 CCC v gs = 6.0v, i d = 35a ? v gs(th) gate threshold voltage 2.2 3.0 3.9 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds =40 v, v gs = 0v CCC CCC 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 1.6 CCC ?? static drain-to-source on-resistance notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 120a. note that curre nt limitations arising from heating of t he device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.046mh,r g = 50 ? , i as = 70a, v gs =10v. ? i sd ? 70a, di/dt ? 1174a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while vds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? this value determined from sample failure population, starting t j = 25c, l= 1mh, r g = 50 ? , i as = 22a, v gs =10v. * halogen -free since april 30, 2014 downloaded from: http:///
3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 269 CCC CCC s v ds = 10v, i d =70a q g total gate charge CCC 62 93 i d = 70a q gs gate-to-source charge CCC 16 CCC v ds = 20v q gd gate-to-drain charge CCC 20 CCC v gs = 10v ? q sync total gate charge sync. (qgC qgd) CCC 42 CCC t d(on) turn-on delay time CCC 11 CCC ns v dd = 20v t r rise time CCC 34 CCC i d = 30a t d(off) turn-off delay time CCC 33 CCC r g = 2.7 ?? t f fall time CCC 23 CCC v gs = 10v ? c iss input capacitance CCC 3183 CCC pf ? v gs = 0v c oss output capacitance CCC 475 CCC v ds = 25v c rss reverse transfer capacitance CCC 331 CCC ? = 1.0mhz, see fig.5 c oss eff.(er) effective output capacitance (energy related) CCC 596 CCC v gs = 0v, vds = 0v to 32v ? c oss eff.(tr) output capacitance (time related) CCC 688 CCC v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 120 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 492 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC 0.9 1.3 v t j = 25c,i s = 70a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 7.6 CCC v/ns t j = 175c,i s = 70a,v ds = 40v t rr reverse recovery time CCC 22 CCC ns t j = 25c v dd = 34v CCC 24 CCC t j = 125c i f = 70a, q rr reverse recovery charge CCC 15 CCC nc t j = 25c di/dt = 100a/s ??? CCC 15 CCC t j = 125c ? i rrm reverse recovery current CCC 1.0 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.6 1.0 1.4 1.8 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 70a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050607080 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 70a fig 8. typical gate charge vs. gate-to-source voltage downloaded from: http:///
5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc package limited -60 -20 20 60 100 140 180 t j , temperature ( c ) 40 41 42 43 44 45 46 47 48 49 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5.0ma 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 e n e r g y ( j ) v ds = 0v to 32v 0 100 200 300 400 500 i d , drain current (a) 0.0 5.0 10.0 15.0 20.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 13. typical on-resista nce vs. drain current fig 11. drain-to-source breakdown voltage downloaded from: http:///
6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 15. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 70a downloaded from: http:///
7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf fig 17. threshold voltage vs. temperature -75 -25 25 75 125 175 225 t j , temperature ( c ) 0.5 1.5 2.5 3.5 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 100a id = 250a id = 1.0ma id = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 1 2 3 4 5 6 i r r m ( a ) i f = 46a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 1 2 3 4 5 i r r m ( a ) i f = 70a v r = 34v t j = 25c t j = 125c fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 10 20 30 40 50 60 70 q r r ( n c ) i f = 46a v r = 34v t j = 25c t j = 125c fig 20. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 10 20 30 40 50 60 q r r ( n c ) i f = 70a v r = 34v t j = 25c t j = 125c fig 21. typical stored charge vs. dif/dt downloaded from: http:///
8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . downloaded from: http:///
10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? IRFB7446pbf ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 9/11/2012 ? added package limit and updated fig2 & fig10 on page 1, 2 & page 5. 4/22/2014 ?? updated data sheet with new ir corporate template. ?? updated package outline and part marking on page 9. ?? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. 11/7/2014 ?? updated e as (l =1mh) = 236mj on page 2 ?? updated note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v. on page 2 downloaded from: http:///
|
